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TPS1120Y Datasheet DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

Manufacturer: Texas Instruments

Overview: TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS D Low rDS(on) . . . 0.18 Ω at VGS = – 10 V D 3-V Compatible D Requires No External VCC D TTL and CMOS Compatible Inputs D VGS(th) = – 1.

Download the TPS1120Y datasheet PDF. This datasheet also includes the TPS1120 variant, as both parts are published together in a single manufacturer document.

Datasheet Details

Part number TPS1120Y
Manufacturer Texas Instruments
File Size 373.89 KB
Description DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS
Datasheet

General Description

The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have been optimized, by means of the Texas Instruments LinBiCMOS™ process, for 3-V or 5-V power distribution in battery-powered systems.

With a maximum VGS(th) of – 1.5 V and an IDSS of only 0.5 µA, the TPS1120 is the ideal high-side switch for low-voltage portable battery-management systems, where maximizing battery life is a primary concern.

Because portable equipment is potentially subject to electrostatic discharge (ESD), the MOSFETs have built-in circuitry for 2-kV ESD protection.

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