Datasheet Details
| Part number | TPS1120Y |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 373.89 KB |
| Description | DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS |
| Datasheet | |
|
|
|
Overview: TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS D Low rDS(on) . . . 0.18 Ω at VGS = – 10 V D 3-V Compatible D Requires No External VCC D TTL and CMOS Compatible Inputs D VGS(th) = – 1.
Download the TPS1120Y datasheet PDF. This datasheet also includes the TPS1120 variant, as both parts are published together in a single manufacturer document.
| Part number | TPS1120Y |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 373.89 KB |
| Description | DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS |
| Datasheet | |
|
|
|
The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have been optimized, by means of the Texas Instruments LinBiCMOS™ process, for 3-V or 5-V power distribution in battery-powered systems.
With a maximum VGS(th) of – 1.5 V and an IDSS of only 0.5 µA, the TPS1120 is the ideal high-side switch for low-voltage portable battery-management systems, where maximizing battery life is a primary concern.
Because portable equipment is potentially subject to electrostatic discharge (ESD), the MOSFETs have built-in circuitry for 2-kV ESD protection.
Compare TPS1120Y distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Part Number | Description |
|---|---|
| TPS1120 | DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS |
| TPS1100 | SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS |
| TPS1100Y | SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS |
| TPS1101 | SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS |
| TPS1101Y | SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS |
| TPS1110 | SINGLE P-CHANNEL LOGIC-LEVEL MOSFETS |
| TPS1110Y | SINGLE P-CHANNEL LOGIC-LEVEL MOSFETS |
| TPS1663 | 6-A eFuse |
| TPS16630 | 6-A eFuse |
| TPS16632 | 6-A eFuse |